mil-std-202, method 208 weight: 1.7 grams (approx.) polarity: as marked on body ideal for printed circuit boards low forward voltage drop case: molded plastic 3.0a bridge rectifier features ! diffused junction ! ! high current capability ! high reliability ! ! mechanical data ! ! terminals: plated leads solderable per ! ! ! mounting position: any ! marking: type number maximum ratings and electrical characteristics @t a =25c unless otherwise specified single phase, half wave, 60hz, resistive or inductive load. for capacitive load, derate current by 20%. characteristic symbol kbp 301 kbp 302 kbp 303 kbp 304 kbp 305 kbp 306 kbp 307 unit peak repetitive reverse voltage working peak reverse voltage dc blocking voltage v rrm v rwm v r 50 100 200 400 600 800 1000 v rms reverse voltage v r(rms) 35 70 140 280 420 560 700 v average rectified output current (note 1) @t a = 50c i o 3.0 a non-repetitive peak forward surge current 8.3ms single half sine-wave superimposed on rated load (jedec method) i fsm 80 a forward voltage (per element) @i f = 2.0a v fm 1.1 v peak reverse current @t a = 25c at rated dc blocking voltage @t a = 100c i rm 10 500 a typical thermal resistance (note 3) r ja 30 k/w operating and storage temperature range t j, t stg -55 to +150 c note: 1. leads maintained at ambient temperature at a distance of 9.5mm from the case. 2. measured at 1.0 mhz and applied reverse voltage of 4.0v d.c. 3. thermal resistance junction to ambient mounted on pc board with 12mm 2 copper pad. kbp301 ? kbp307 ! lead free: for rohs / lead free version, kbp-2 dim min max a 14.22 15.24 b 10.60 11.68 c 15.2 ? d 3.40 4.20 e 3.60 4.10 g h 0.70 0.90 i 12.7 ? j 4.2 x 45 typical all dimensions in mm j a ~ ~ - b c h i d g 1.27 ? + e k b p 200 ? k b p 2010 1 o f 3 ? 20 0 2 w on- t op e l e c t ron i cs kbp200 ? kbp2010 2.0a bridge rectifier features ! diffused junction ! low forward voltage drop l a ! high current capability ! high reliability ! high surge current capability b j ! ideal for printed circuit boards + ~ ~ - ! ul recognized file # e157705 c k mechanical data ! case: molded plastic h i ! terminals: plated leads solderable per mil-std-202, method 208 e ! polarity: as marked on body g ! weight: 1.7 grams (approx.) d ! mounting position: any ! marking: type number maximum ratings and electrical characteristics @t a =25c unless otherwise specified single phase, half wave, 60hz, resistive or inductive load. for capacitive load, derate current by 20%. characteristic symbol kbp 200 kbp 201 kbp 202 kbp 204 kbp 206 kbp 208 kbp 2010 unit peak repetitive reverse voltage working peak reverse voltage dc blocking voltage v rrm v rwm v r 50 100 200 400 600 800 1000 v rms reverse voltage v r(rms) 35 70 140 280 420 560 700 v average rectified output current (note 1) @t a = 50c i o 2.0 a non-repetitive peak forward surge current 8.3ms single half sine-wave superimposed on rated load (jedec method) i fsm 60 a forward voltage (per element) @i f = 2.0a v fm 1.1 v peak reverse current @t a = 25c at rated dc blocking voltage @t a = 100c i rm 10 500 a rating for fusing (t<8.3ms) i 2 t 15 a 2 s typical junction capacitance per element (note 2) c j 25 pf typical thermal resistance (note 3) r ja 30 k/w operating and storage temperature range t j, t stg -55 to +165 c note: 1. leads maintained at ambient temperature at a distance of 9.5mm from the case. 2. measured at 1.0 mhz and applied reverse voltage of 4.0v d.c. 3. thermal resistance junction to ambient mounted on pc board with 12mm 2 copper pad. wte power semiconductors kbp dim min max a 14.22 15.24 b 10.67 11.68 c 15.2 ? d 4.57 5.08 e 3.60 4.10 g 2.16 2.67 h 0.76 0.86 i 1.52 ? j 11.68 12.7 k 12.7 ? l 3.2 x 45 typical all dimensions in mm
0 0.1 1.0 10 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 i , inst a n t a ne ous f wd c u r r e n t ( a ) f v , instantaneous fwd voltage (v) fig. 2 typical fwd characteristics f t = 150c j t = 25c j pulse width = 300 s 0 80 20 60 40 100 1 10 100 i , p e a k f w d sur g e c u r r e n t ( a ) fs m number of cycles at 60 hz fi g . 3 max non-repetitive peak fwd sur g e current t = 150c single half sine wave (jedec method) j 1 10 100 110100 c , junction cap acit ance (pf) j v , reverse voltage (v) fig. 4 typical junction capacitance r t = 25c f = 1mhz j 0.01 0.1 1.0 10 100 1000 10,000 0 20 40 60 80 100 120 140 i , inst ant aneous reverse current (ma) r percent of rated peak reverse voltage (%) fi g . 5 typical reverse characteristics t = 125c j t = 100c j t = 25c j t = 150c j 0 1.0 2.0 3.0 0 75 150 225 i , a v erage rect ified current (a) o t, temperature (c) fi g . 1 forward current deratin g curve kbp301 ? kbp307 0 0.1 1.0 10 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 i , inst a n t a ne ous f wd c u r r e n t ( a ) f v , instantaneous fwd voltage (v) fig. 2 typical fwd characteristics f t = 150c j t = 25c j pulse width = 300 s 0 80 20 60 40 100 1 1 0 100 i , p e a k f w d sur g e c u r r e n t ( a ) fs m number of cycles at 60 hz fi g . 3 max non-repetitive peak fwd sur g e current t = 150c single half sine wave (jedec method) j 1 10 100 110100 c , junction cap acit ance (pf) j v , reverse voltage (v) fig. 4 typical junction capacitance r t = 25c f = 1mhz j 0.01 0.1 1.0 10 100 1000 10,000 0 2 0 40 6 0 80 100 120 140 i , inst ant aneous reverse current (ma) r percent of rated peak reverse voltage (%) fi g . 5 typical reverse characteristics t = 125c j t = 100c j t = 25c j t = 150c j 0 0.5 1.0 1.5 2.0 0 7 5 1 5 0 22 5 i , a v erage rect ified current (a) o t, temperature (c) fi g . 1 forward current deratin g curve k b p 200 ? k b p 2010 2 of 3 ? 200 2 w on- t op e l e c t ron i cs
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